| PART |
Description |
Maker |
| TLN117B TLN117 TLN117C TLN117A |
TOSHIBA INFRARED LED GAAS INFRAED EMITTER 东芝红外发光二极管公认审INFRAED发射
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| TLP1031A |
TOSHIBA Photointerrupter Infrared LED Photo IC
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN11907 TLN119F TLN119 |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
| TLN110 |
INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLP907 TLP907LB |
TOSHIBA PHOTOREFLECTIVE SENSORS INFRARED LED PHOTODARLINGTON TRANSISTOR 东芝PHOTOREFLECTIVE传感器红外线PHOTODARLINGTON晶体
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TG2216TU |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
Toshiba Corporation
|
| TG2211FT |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| TLGE159P TLPGE159P |
TOSHIBA T-1 3/4 InGaAIP Ultra Bright LED
Toshiba TLxE159 Series LEDs
|
MARKTECH[Marktech Corporate]
|
